A thermal activation view of low voltage impact ionization in MOSFETs

Pin Su*, Ken Ichi Goto, Toshihiro Sugii, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article

23 引文 斯高帕斯(Scopus)

摘要

This letter presents a thermal activation perspective for direct assessment of the low voltage impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally determined activation energy and a simple theoretical model is used to demonstrate the underlying mechanism responsible for impact ionization at low drain bias. Our study indicates that the main driving force of impact ionization changes from the electric field to the lattice temperature with power-supply scaling below 1.2 V. This transition of driving force results in a linear relationship between log(ISUB/ID) and VD at sub-bandgap drain bias, as predicted by the proposed thermally-assisted impact ionization model.

原文English
頁(從 - 到)550-552
頁數3
期刊IEEE Electron Device Letters
23
發行號9
DOIs
出版狀態Published - 1 九月 2002

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