A systematic investigation of work function in advanced metal gate-HfO2-SiO2 structures with bevel oxide

Atsushi Kuriyama*, Jérôme Mitard, Olivier Faynot, Laurent Brévard, Laurence Clerc, Amélie Tozzo, Vincent Vidal, Simon Deleonibus, Hiroshi Iwai, Sorin Cristoloveanu

*Corresponding author for this work

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper presents for the first time the work function extraction for chemical vapor deposition (CVD)-TiN and poly-Si work functions on atomic layer deposition (ALD)-HfO2 and high temperature SiO2 (HTO) for a wide range of EOT values. The measurements were performed on bevel oxide structures with various SiO2 thicknesses from 0 to 12 nm. Our results reveal that the work functions of both TiN and poly-Si gates highly depend on the underlying dielectrics especially in the case of TiN on HTO films. It is found that the leakage current also depends on the dielectric stacks. When TiN is formed on the HTO film, its work function has two distinct values depending on the HTO thickness; this indicates that Ti{single bond}Si bonds strongly affect the work function variation. Both TiN on HTO and poly-Si on HfO2 show the work function shifts to about 4.3 eV, suggesting a pinning level in both structures.

原文English
頁(從 - 到)1515-1522
頁數8
期刊Solid-State Electronics
51
發行號11-12
DOIs
出版狀態Published - 十一月 2007

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