A strategic review of recent progress in metamorphic quantum well based heterostructure electronic devices

Partha Mukhopadhyay*, Palash Das, Saptarshi Pathak, Sudip Kundu, Edward Yi Chang, Dhrabes Biswas

*Corresponding author for this work

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

Recent expansion in the demand for high performance applications require high performance devices. It can be achieved by utilizing features of the quantum well based heterostructures on metamorphic buffer. Based on this metamorphic technique two electronic devices, named high electron mobility transistors (MHEMTs) & heterojunction bipolar transistors (MHBTs) are the areas of interest now-a-days. This paper reviews the remarkable progress being made in the development of InP based MHEMT & MHBT in the context of material properties, device structures, DC and RF performances for the development of low cost, high performance power amplifier (PA) and low noise amplifier (LNA) with high linearity applications.

原文English
主出版物標題2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
頁面503-506
頁數4
DOIs
出版狀態Published - 10 十一月 2008
事件2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
持續時間: 18 八月 200821 八月 2008

出版系列

名字2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
國家United States
城市Arlington, TX
期間18/08/0821/08/08

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  • 引用此

    Mukhopadhyay, P., Das, P., Pathak, S., Kundu, S., Chang, E. Y., & Biswas, D. (2008). A strategic review of recent progress in metamorphic quantum well based heterostructure electronic devices. 於 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (頁 503-506). [4617133] (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO). https://doi.org/10.1109/NANO.2008.151