A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

Yiming Li*, Cheng Kai Chen

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, we utilize an evolutionary technique for inverse doping profile problems of the 65 nm complementary metal oxide semiconductor (CMOS) devices. The approach mainly bases upon the process simulation, device simulation, evolutionary strategy, and empirical knowledge. For a set of given measured I-V curves of the 65 nm CMOS, a developed prototype performs the optimization task to automatically calibrate and inversely search out, for example the doping recipe and device physical model parameters. The simulation-optimization-coupled methodology is complicated theoretically, but our preliminary results imply that it may benefit the development of fabrication technology and can be used for the performance diagnosis, in particular, for sub-65 nm devices.

原文English
頁(從 - 到)365-370
頁數6
期刊Journal of Computational Electronics
5
發行號4
DOIs
出版狀態Published - 十二月 2006

指紋 深入研究「A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices」主題。共同形成了獨特的指紋。

引用此