A simple growth method to produce a-plane GaN thick films by hydride vapor phase epitaxy

Yin Hao Wu, Chuo Han Lee, Chung Ming Chu, Yen Hsien Yeh, Chan Lin Chen, Wei-I Lee

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

A-plane GaN was grown on r -plane sapphire using a two-step growth method by hydride vapor phase epitaxy (HVPE). In the first step, a-plane GaN formed triangular stripes along the m-direction ([ 1100] direction) at a low growth temperature. Then, increasing the growth temperature enhanced the lateral growth mode to coalesce a-plane GaN in the second step. There were triangular voids formed after growth. In this work, a new method was developed to produce the voids in the a-plane GaN film using the two-step growth method without optical lithography.

原文English
文章編號08JB08
期刊Japanese Journal of Applied Physics
52
發行號8 PART 2
DOIs
出版狀態Published - 1 八月 2013

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