A sandwiched buffer layer enabling pulsed ultraviolet- and visible-laser annealings for direct fabricating poly-Si field-effect transistors on the polyimide

Ming Hsuan Kao, Wen Hsien Huang, Jia Min Shieh, Chang Hong Shen, Pei Kang Lee, Hsing Hsiang Wang, Chih Chao Yang, Tung Ying Hsieh, Peichen Yu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A sandwiched buffer layer of SiO2/Al/SiO2 enables ultraviolet-laser crystallization and visible-laser activation for direct fabrication of a poly-Si flexible field-effect-transistor (fFET) on polyimides. The buffer layer can produce heat accumulation and laser reflection from the Al/SiO2 interface to facilitate grain growth and contact resistance reduction of poly-Si without damaging the polyimide substrate. The feature size of poly-Si fFET has shrunk to 400 nm via laser annealing, with the on/off current-ratio exceeding 5 × 106 and a subthreshold swing of 190 mV/dec. Moreover, the transfer characteristics of fFET by tension stress can be maintained until the bending radius reaches over 15 mm.

原文English
文章編號024101
期刊Applied Physics Letters
111
發行號2
DOIs
出版狀態Published - 10 七月 2017

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