A robust physical and predictive model for deep-submicrometer MOS circuit simulation

J. H. Huang*, Z. H. Liu, M. C. Jeng, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

We present a physical, predictive and efficient model (BSIM31) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications. BSIM3 can also be suitable for statistical modeling.

原文English
主出版物標題Proceedings of the Custom Integrated Circuits Conference
發行者Publ by IEEE
ISBN(列印)0780308263
DOIs
出版狀態Published - 1 一月 1993
事件Proceedings of the IEEE 1993 Custom Integrated Circuits Conference - San Diego, CA, USA
持續時間: 9 五月 199312 五月 1993

出版系列

名字Proceedings of the Custom Integrated Circuits Conference
ISSN(列印)0886-5930

Conference

ConferenceProceedings of the IEEE 1993 Custom Integrated Circuits Conference
城市San Diego, CA, USA
期間9/05/9312/05/93

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