A practical SPICE macro model for the IGBT

Ying-Yu Tzou*, Lun Jun Hsu

*Corresponding author for this work

研究成果: Conference contribution同行評審

15 引文 斯高帕斯(Scopus)

摘要

A practical SPICE macro model of the insulated gate bipolar transistor (IGBT) is presented in this paper. The proposed IGBT behavior model is constructed based on an equivalent circuit of the device physical construction and its relevant parameters can be derived from the given data sheet. The proposed new model is especially suitable for the design of gate drive and snubber circuit by using circuit simulation. It is also very useful for the simulation of power electronics system in a system level. Simulation and experimental results of the IGBT switching behavior have been obtained to verify the proposed IGBT macro model.

原文English
主出版物標題IECON Proceedings (Industrial Electronics Conference)
編輯 Anon
發行者Publ by IEEE
頁面762-766
頁數5
ISBN(列印)0780308913
DOIs
出版狀態Published - 1 十二月 1993
事件Proceedings of the 19th International Conference on Industrial Electronics, Control and Instrumentation - Maui, Hawaii, USA
持續時間: 15 十一月 199318 十一月 1993

出版系列

名字IECON Proceedings (Industrial Electronics Conference)
2

Conference

ConferenceProceedings of the 19th International Conference on Industrial Electronics, Control and Instrumentation
城市Maui, Hawaii, USA
期間15/11/9318/11/93

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