A practical SPICE macro model of the insulated gate bipolar transistor (IGBT) is presented in this paper. The proposed IGBT behavior model is constructed based on an equivalent circuit of the device physical construction and its relevant parameters can be derived from the given data sheet. The proposed new model is especially suitable for the design of gate drive and snubber circuit by using circuit simulation. It is also very useful for the simulation of power electronics system in a system level. Simulation and experimental results of the IGBT switching behavior have been obtained to verify the proposed IGBT macro model.