A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

Yi-Ming Li; Shao Ming Yu

doi:10.1016/j.cpc.2005.03.069

A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

Yi-Ming Li^*, Shao Ming Yu

^*Corresponding author for this work

電信工程研究所

研究成果: Conference article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

原文	English
頁（從 - 到）	309-312
頁數	4
期刊	Computer Physics Communications
卷	169
發行號	1-3
DOIs	https://doi.org/10.1016/j.cpc.2005.03.069
出版狀態	Published - 1 七月 2005
事件	Proceedings of the Europhysics Conference on Computational Physics 2004 CCP 2004 - 持續時間: 1 九月 2004 → 4 九月 2004

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10.1016/j.cpc.2005.03.069

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引用此

@article{94eba253429448af97fcb9f00d5ef9ed,

title = "A numerical iterative method for solving Schr{\"o}dinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures",

abstract = "Numerical solution of the Schr{\"o}dinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.",

keywords = "Monotone iterative method, Nanoscale MOS structures, Numerical iterative method, Quantum corrected Poisson equation, Schr{\"o}dinger and Poisson equations",

author = "Yi-Ming Li and Yu, {Shao Ming}",

year = "2005",

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doi = "10.1016/j.cpc.2005.03.069",

language = "English",

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pages = "309--312",

journal = "Computer Physics Communications",

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note = "null ; Conference date: 01-09-2004 Through 04-09-2004",

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TY - JOUR

T1 - A numerical iterative method for solving Schrödinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide- semiconductor structures

AU - Li, Yi-Ming

AU - Yu, Shao Ming

PY - 2005/7/1

Y1 - 2005/7/1

N2 - Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

AB - Numerical solution of the Schrödinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (MI) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method.

KW - Monotone iterative method

KW - Nanoscale MOS structures

KW - Numerical iterative method

KW - Quantum corrected Poisson equation

KW - Schrödinger and Poisson equations

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JO - Computer Physics Communications

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