A novel technique for profiling the lateral n- doping concentrations of submicron LDD MOS Devices

Steve S. Chung*, Mong Song Liang, S. M. Cheng, R. G.H. Lee, S. N. Kuo

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n region) of LDD n-MOSFET's. One interesting result is the direct observation of the reverse-short-channel effect (RSCE) [1]. It is observed that S/D n- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFET's in the current ULSI technology.

原文English
頁(從 - 到)2220-2226
頁數7
期刊IEEE Transactions on Electron Devices
44
發行號12
DOIs
出版狀態Published - 1 十二月 1997

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