A novel sonos memory with recessed-channel poly-si TFT via excimer laser crystallization

I. Che Lee*, Chun Chien Tsai, Hsu Hang Kuo, Po Yu Yang, Chao Lung Wang, Huang-Chung Cheng

*Corresponding author for this work

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

A silicon-oxide-nitride-oxide-silicon memory with recessed-channel (RC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) via excimer-laser crystallization (ELC) has been demonstrated to achieve a high mobility of ∼400cm 2 Vċs and a large ON/OFF current ratio of ∼ 10 8. Such a high performance is because the RC poly-Si TFTs possess only one perpendicular grain boundary (GB) in the channel and the corresponding protrusion at this GB. In addition, the proposed devices also exhibited the largest memory window of 2.63 V in 10 ms with respect to 2.37 and 1.31 V for the conventional-ELC and solid-phase-crystallized ones, respectively. Since the silicon grain growth could be artificially controlled, the device-to-device uniformity could be significantly improved. Therefore, such a simple scheme is promising for applications of low-temperature poly-Si TFTs in 3-D ICs and system on panel.

原文English
文章編號6163340
頁(從 - 到)558-560
頁數3
期刊IEEE Electron Device Letters
33
發行號4
DOIs
出版狀態Published - 1 四月 2012

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