A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET): Optical/electrical properties of a SONOS-type three-terminal electroluminescence device for optical communication in ULSI

C. C. Yeh*, W. J. Tsai, T. C. Lu, Y. R. Chen, Fu-Ming Pan, S. H. Gu, Y. Y. Liao, H. L. Kao, T. F. Ou, N. K. Zous, Wen Chi Ting, Ta-Hui Wang, Joseph Ku, Chih Yuan Lu

*Corresponding author for this work

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

A novel Silicon-Nitride based Light-Emitting Transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are generated by Fowler-Nordheim electron (FN-E) tunnel-injection, band-to-band tunneling induced hot-hole (BTBT-HH) injection, and carrier scattering/trapping/recombination via nitride traps. SiNLET with an effective device area of 0.616 μm 2 is demonstrated for display and optical communication purposes.

原文English
主出版物標題IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
頁面1013-1016
頁數4
DOIs
出版狀態Published - 1 十二月 2005
事件IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
持續時間: 5 十二月 20057 十二月 2005

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2005
ISSN(列印)0163-1918

Conference

ConferenceIEEE International Electron Devices Meeting, 2005 IEDM
國家United States
城市Washington, DC, MD
期間5/12/057/12/05

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