A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications

H. W. Cheng, E. R. Hsieh*, Z. H. Huang, C. H. Chuang, C. H. Chen, F. L. Li, Y. M. Lo, C. H. Liu, Steve S. Chung

*Corresponding author for this work

研究成果: Conference contribution

摘要

A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named Rewritable One-time- programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of- the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.

原文English
主出版物標題2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538648254
DOIs
出版狀態Published - 3 七月 2018
事件2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan
持續時間: 16 四月 201819 四月 2018

出版系列

名字2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
國家Taiwan
城市Hsinchu
期間16/04/1819/04/18

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    Cheng, H. W., Hsieh, E. R., Huang, Z. H., Chuang, C. H., Chen, C. H., Li, F. L., Lo, Y. M., Liu, C. H., & Chung, S. S. (2018). A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications. 於 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (頁 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403852