A novel program-erasable capacitor using high-κ AlN dielectric

C. H. Lai*, M. W. Ma, C. F. Cheng, Albert Chin, S. P. McAlister, C. X. Zhu, M. F. Li, D. L. Kwong

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ± 4V and that has good retention for 1T1C memory. These features are not shown by Al2O3, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06V after ± 4V P/E for 104s and shows potentially long memory time.

原文English
主出版物標題Device Research Conference - Conference Digest, 62nd DRC
頁面77-78
頁數2
DOIs
出版狀態Published - 1 十二月 2004
事件Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States
持續時間: 21 六月 200423 六月 2004

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

Conference

ConferenceDevice Research Conference - Conference Digest, 62nd DRC
國家United States
城市Notre Dame, IN
期間21/06/0423/06/04

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