A novel one transistor non-volatile memory feasible for NOR and NAND applications in IoT era

Steve S. Chung, E. R. Hsieh, S. P. Yang, C. H. Chuang

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

For the first time, we propose a one transistor nonvolatile memory which can solve the long time charge loss issue incurred in the conventional nitride-storage cell, a hurdle to the scaling of SONOS memory. The SONOS cell uses charge as the storage, while the new invention discloses a cell with one transistor and the gate connected to a simple MIM structure. The readout is from the transistor's Vth or Id, similar to that of flash memory. A bilayer MIM is preferable for best performance. Results demonstrated that this memory exhibits excellent endurance, retention, large window, which can also solve the sneak path and forming issues in conventional crossbar ReRAM. The architecture is fully compatible with the logic CMOS technology and well-suited for both NOR and NAND memories, especially for future embedded applications.

原文English
主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面44-45
頁數2
ISBN(電子)9781509007264
DOIs
出版狀態Published - 27 九月 2016
事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
持續時間: 12 六月 201613 六月 2016

出版系列

名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
國家United States
城市Honolulu
期間12/06/1613/06/16

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