A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory

Shih Ching Chen*, Ting Chang Chang, Po-Tsun Liu, Yung Chun Wu, Po Shun Lin, Bae Heng Tseng, Jang Hung Shy, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

*Corresponding author for this work

研究成果: Article

56 引文 斯高帕斯(Scopus)

摘要

In this letter, a polycrystalline silicon thin-film transistor consisting of silicon-oxide-nitride-oxide-silicon (SONOS) stack gate dielectric and nanowire (NW) channels was investigated for the applications of transistor and nonvolatile memory. The proposed device, which is named as NW SONOS-TFT, has superior electrical characteristics of transistor, including a higher drain current, a smaller threshold voltage (Vth), and a steeper subthreshold slope. Moreover, the NW SONOS-TFT also can exhibit high program/erase efficiency under adequate bias operation. The duality of both transistor and memory device for the NW SONOS-TFT can be attributed to the trigate structure and channel corner effect.

原文English
頁(從 - 到)809-811
頁數3
期刊IEEE Electron Device Letters
28
發行號9
DOIs
出版狀態Published - 1 十二月 2007

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    Chen, S. C., Chang, T. C., Liu, P-T., Wu, Y. C., Lin, P. S., Tseng, B. H., Shy, J. H., Sze, S. M., Chang, C. Y., & Lien, C. H. (2007). A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory. IEEE Electron Device Letters, 28(9), 809-811. https://doi.org/10.1109/LED.2007.903885