A novel NAND-type PHINES nitride trapping storage flash memory cell with physically 2-bits-per-cell storage, and a high programming throughput for mass storage applications

C. C. Yeh, Ta-Hui Wang, Y. Y. Liao, W. J. Tsai, T. C. Lu, M. S. Chen, Y. R. Chen, K. F. Chen, Z. T. Han, M. S. Wong, S. M. Hsu, N. K. Zous, T. F. Ou, Wenchi Ting, Joseph Ku, Chih Yuan Lu

研究成果: Conference article同行評審

9 引文 斯高帕斯(Scopus)

摘要

A novel NAND-type PHINES nitride trapping storage flash memory cell is proposed for the first time. PHINES memory cells use a SONOS cell structure, and are arranged in a modified NAND array. FN electron injection and band-to-band (BTB) hot-hole (HH) injection are utilized as the erase and the program operations, respectively. Read is performed by a novel BTB current sensing scheme. Physically 2-bits-per-cell storage, low power operation, and a high programming throughput are demonstrated.

原文English
文章編號1469234
頁(從 - 到)116-117
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
2005
DOIs
出版狀態Published - 1 十二月 2005
事件2005 Symposium on VLSI Technology - Kyoto, Japan
持續時間: 14 六月 200514 六月 2005

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