A novel high-performance poly-silicon thin film transistor with a self-aligned thicker sub-gate oxide near the drain/source regions

Kow-Ming Chang, Hung Chung Yuan Hung Chung, Ming Lin Gin Ming Lin, Hong Lin Jian Hong Lin, Gun Deng Chi Gun Deng

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

In this letter, a novel high-performance poly-silicon thin-film transistor (poly-Si TFT) with a self-aligned thicker sub-gate oxide near the drain/source regions is proposed. Poly-Si TFTs with tiffs new structure have been successfully fabricated and the results demonstrate a higher on-off current ratio of 5.9 × 106 and also shows the off-state leakage current 100 times lower than those of the conventional ones at VGS = -15 V and VDS = 10 V. Only four photo-masking steps are required and fully compatible with the conventional TFT fabrication processes. This novel structure is a good candidate for the further high-performance large-area device applications.

原文English
頁(從 - 到)472-474
頁數3
期刊IEEE Electron Device Letters
22
發行號10
DOIs
出版狀態Published - 1 十月 2001

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