A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo*, Xingui Zhang, Hock Chun Chin, Xiao Gong, Shao Ming Koh, Chunlei Zhan, Guang Li Luo, Chun Yen Chang, Hau Yu Lin, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, Yee Chia Yeo

*Corresponding author for this work

研究成果: Conference contribution同行評審

10 引文 斯高帕斯(Scopus)

摘要

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

原文English
主出版物標題Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
頁面152-153
頁數2
DOIs
出版狀態Published - 20 十月 2010
事件2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
持續時間: 26 四月 201028 四月 2010

出版系列

名字Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
國家Taiwan
城市Hsin Chu
期間26/04/1028/04/10

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