A New Method of Analyzing the Short-Circuit Current of Silicon Solar Cells

H. C. Hsieh; Chen-Ming Hu; C. I. Drowley

doi:10.1109/T-ED.1980.19951

A New Method of Analyzing the Short-Circuit Current of Silicon Solar Cells

H. C. Hsieh, Chen-Ming Hu, C. I. Drowley

國際半導體產業學院

研究成果: Article

11 引文斯高帕斯（Scopus）

摘要

New approximations for the carrier generation rates in silicon under AM1 and AM2 solar illumination are presented. They may simplify the analysis of silicon solar cells, particularly when done by hand.

原文	English
頁（從 - 到）	883-885
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	27
發行號	4
DOIs	https://doi.org/10.1109/T-ED.1980.19951
出版狀態	Published - 1 一月 1980

存取文件

10.1109/T-ED.1980.19951

Link to publication in Scopus

指紋深入研究「A New Method of Analyzing the Short-Circuit Current of Silicon Solar Cells」主題。共同形成了獨特的指紋。

引用此

Hsieh, H. C., Hu, C-M., & Drowley, C. I. (1980). A New Method of Analyzing the Short-Circuit Current of Silicon Solar Cells. IEEE Transactions on Electron Devices, 27(4), 883-885. https://doi.org/10.1109/T-ED.1980.19951

@article{85d87f25a1b44edb85acd2ec7c462494,

title = "A New Method of Analyzing the Short-Circuit Current of Silicon Solar Cells",

abstract = "New approximations for the carrier generation rates in silicon under AM1 and AM2 solar illumination are presented. They may simplify the analysis of silicon solar cells, particularly when done by hand.",

author = "Hsieh, {H. C.} and Chen-Ming Hu and Drowley, {C. I.}",

year = "1980",

month = jan,

day = "1",

doi = "10.1109/T-ED.1980.19951",

language = "English",

volume = "27",

pages = "883--885",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - A New Method of Analyzing the Short-Circuit Current of Silicon Solar Cells

AU - Hsieh, H. C.

AU - Hu, Chen-Ming

AU - Drowley, C. I.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - New approximations for the carrier generation rates in silicon under AM1 and AM2 solar illumination are presented. They may simplify the analysis of silicon solar cells, particularly when done by hand.

AB - New approximations for the carrier generation rates in silicon under AM1 and AM2 solar illumination are presented. They may simplify the analysis of silicon solar cells, particularly when done by hand.

UR - http://www.scopus.com/inward/record.url?scp=0019006955&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1980.19951

DO - 10.1109/T-ED.1980.19951

M3 - Article

AN - SCOPUS:0019006955

VL - 27

SP - 883

EP - 885

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

ER -