摘要
New approximations for the carrier generation rates in silicon under AM1 and AM2 solar illumination are presented. They may simplify the analysis of silicon solar cells, particularly when done by hand.
原文 | English |
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頁(從 - 到) | 883-885 |
頁數 | 3 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 27 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1 一月 1980 |