A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling

Jyh-Chyurn Guo*, Yi Min Lin

*Corresponding author for this work

研究成果: Article

31 引文 斯高帕斯(Scopus)

摘要

A new equivalent circuit method is proposed in this paper to de-embed the lossy substrate and lossy pads' parasitics from the measured RF noise of multifinger MOSFETs with aggressive gate length scaling down to 80 nm. A new RLC network model is subsequently developed to simulate the lossy substrate and lossy pad effect. Good agreement has been realized between the measurement and simulation in terms of S-parameters and four noise parameters, NFmin (minimum noise figure), Rn (noise resistance), Re(Ysopt Im(Ysopt) for the sub-100-nm RF nMOS devices. The intrinsic NFmin extracted by the new de-embedding method reveal that NFmin at 10 GHz can be suppressed to below 0.8 dB for the 80-nm nMOS attribut ed to the advancement of fT to 100-GHz level and the effectively reduced gate resistance by multifinger structure.

原文English
頁(從 - 到)339-347
頁數9
期刊IEEE Transactions on Electron Devices
53
發行號2
DOIs
出版狀態Published - 1 二月 2006

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