A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology

Yi Da Lin, Jian Yuan Lin, Chun Kai Wang*, Long Sheng Fan, Kuei-Ann Wen

*Corresponding author for this work

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).

原文English
主出版物標題IEEE SENSORS 2012 - Proceedings
DOIs
出版狀態Published - 1 十二月 2012
事件11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
持續時間: 28 十月 201231 十月 2012

出版系列

名字Proceedings of IEEE Sensors

Conference

Conference11th IEEE SENSORS 2012 Conference
國家Taiwan
城市Taipei
期間28/10/1231/10/12

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  • 引用此

    Lin, Y. D., Lin, J. Y., Wang, C. K., Fan, L. S., & Wen, K-A. (2012). A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology. 於 IEEE SENSORS 2012 - Proceedings [6411546] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411546