@article{baeb803142b04721a84434a798378f13,
title = "A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography",
abstract = "We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.",
keywords = "Amplifier, Feedback, GaAs, Lithography, Low current, Low distortion, MODFET, Phase shift, Wide-band",
author = "Hidetoshi Ishida and Kazuo Miyatsuji and Tsuyoshi Tanaka and Hiroshi Takenaka and Hidetoshi Furukawa and Mitsuru Nishitsuji and Akiyoshi Tamura and Daisuke Ueda",
year = "2000",
month = may,
day = "1",
doi = "10.1109/22.841870",
language = "English",
volume = "48",
pages = "771--776",
journal = "IEEE Transactions on Microwave Theory and Techniques",
issn = "0018-9480",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}