A low-current and low-distortion wide-band amplifier using 0.2-m gate modfet fabricated by using phase-shift lithography

Hidetoshi Ishida*, Kazuo Miyatsuji, Tsuyoshi Tanaka, Hiroshi Takenaka, Hidetoshi Furukawa, Mitsuru Nishitsuji, Akiyoshi Tamura, Daisuke Ueda

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.

原文English
頁(從 - 到)771-776
頁數6
期刊IEEE Transactions on Microwave Theory and Techniques
48
發行號5
DOIs
出版狀態Published - 1 五月 2000

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