We have developed a wide-band amplifier that can keep a gain over 10 dB at an operation current of 10 niA from 100 MHz to 3 GHz. The fabricated integrated circuit (1C) achieved a high-output third-order intercept point of 30 dBm and low noise figure of 1.6 dB at 800 MHz, respectively. The present 1C employs a MODFET with 0.2-//m gate fabricated by using a phase-shift lithography technique.
|頁（從 - 到）||771-776|
|期刊||IEEE Transactions on Microwave Theory and Techniques|
|出版狀態||Published - 1 五月 2000|