A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

Masaaki Nishijima*, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

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Physics & Astronomy

Engineering & Materials Science