A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

Masaaki Nishijima*, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

研究成果: Conference contribution同行評審

7 引文 斯高帕斯(Scopus)

摘要

We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.

原文English
主出版物標題2005 IEEE MTT-S International Microwave Symposium Digest
頁面299-302
頁數4
DOIs
出版狀態Published - 1 十二月 2005
事件2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
持續時間: 12 六月 200517 六月 2005

出版系列

名字IEEE MTT-S International Microwave Symposium Digest
2005
ISSN(列印)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
國家United States
城市Long Beach, CA
期間12/06/0517/06/05

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