@inproceedings{8aeabb8a35c54922aaac04d7d2091de7,
title = "A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer",
abstract = "We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.",
keywords = "AlGaN/GaN heteroj unction FET, Coplanar waveguides, MMIC amplifiers, Sapphire, Source resistance, Superlattices",
author = "Masaaki Nishijima and Tomohiro Murata and Yutaka Hirose and Masahiro Hikita and Noboru Negoro and Hiroyuki Sakai and Yasuhiro Uemoto and Kaoru Inoue and Tsuyoshi Tanaka and Daisuke Ueda",
year = "2005",
month = dec,
day = "1",
doi = "10.1109/MWSYM.2005.1516585",
language = "English",
isbn = "0780388461",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "299--302",
booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",
note = "null ; Conference date: 12-06-2005 Through 17-06-2005",
}