A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

Masaaki Nishijima; Tomohiro Murata; Yutaka Hirose; Masahiro Hikita; Noboru Negoro; Hiroyuki Sakai; Yasuhiro Uemoto; Kaoru Inoue; Tsuyoshi Tanaka; Daisuke Ueda

doi:10.1109/MWSYM.2005.1516585

A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

Masaaki Nishijima^*, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda

^*Corresponding author for this work

國際半導體產業學院

研究成果: Conference contribution › 同行評審

7 引文斯高帕斯（Scopus）

摘要

We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.

原文	English
主出版物標題	2005 IEEE MTT-S International Microwave Symposium Digest
頁面	299-302
頁數	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1516585
出版狀態	Published - 1 十二月 2005
事件	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States 持續時間: 12 六月 2005 → 17 六月 2005

出版系列

名字	IEEE MTT-S International Microwave Symposium Digest
卷	2005
ISSN（列印）	0149-645X

Conference

Conference	2005 IEEE MTT-S International Microwave Symposium
國家	United States
城市	Long Beach, CA
期間	12/06/05 → 17/06/05

存取文件

10.1109/MWSYM.2005.1516585

其它文件與鏈接

Link to publication in Scopus

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引用此

Nishijima, M., Murata, T., Hirose, Y., Hikita, M., Negoro, N., Sakai, H., Uemoto, Y., Inoue, K., Tanaka, T., & Ueda, D. (2005). A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer. 於 2005 IEEE MTT-S International Microwave Symposium Digest (頁 299-302). [1516585] (IEEE MTT-S International Microwave Symposium Digest; 卷 2005). https://doi.org/10.1109/MWSYM.2005.1516585

Nishijima, Masaaki ; Murata, Tomohiro ; Hirose, Yutaka ; Hikita, Masahiro ; Negoro, Noboru ; Sakai, Hiroyuki ; Uemoto, Yasuhiro ; Inoue, Kaoru ; Tanaka, Tsuyoshi ; Ueda, Daisuke. / A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer. 2005 IEEE MTT-S International Microwave Symposium Digest. 2005. 頁 299-302 (IEEE MTT-S International Microwave Symposium Digest).

@inproceedings{8aeabb8a35c54922aaac04d7d2091de7,

title = "A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer",

abstract = "We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.",

keywords = "AlGaN/GaN heteroj unction FET, Coplanar waveguides, MMIC amplifiers, Sapphire, Source resistance, Superlattices",

author = "Masaaki Nishijima and Tomohiro Murata and Yutaka Hirose and Masahiro Hikita and Noboru Negoro and Hiroyuki Sakai and Yasuhiro Uemoto and Kaoru Inoue and Tsuyoshi Tanaka and Daisuke Ueda",

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doi = "10.1109/MWSYM.2005.1516585",

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Nishijima, M, Murata, T, Hirose, Y, Hikita, M, Negoro, N, Sakai, H, Uemoto, Y, Inoue, K, Tanaka, T & Ueda, D 2005, A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer. 於 2005 IEEE MTT-S International Microwave Symposium Digest., 1516585, IEEE MTT-S International Microwave Symposium Digest, 卷 2005, 頁 299-302, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 12/06/05. https://doi.org/10.1109/MWSYM.2005.1516585

A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer. / Nishijima, Masaaki; Murata, Tomohiro; Hirose, Yutaka; Hikita, Masahiro; Negoro, Noboru; Sakai, Hiroyuki; Uemoto, Yasuhiro; Inoue, Kaoru; Tanaka, Tsuyoshi; Ueda, Daisuke.

2005 IEEE MTT-S International Microwave Symposium Digest. 2005. p. 299-302 1516585 (IEEE MTT-S International Microwave Symposium Digest; 卷 2005).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer

AU - Nishijima, Masaaki

AU - Murata, Tomohiro

AU - Hirose, Yutaka

AU - Hikita, Masahiro

AU - Negoro, Noboru

AU - Sakai, Hiroyuki

AU - Uemoto, Yasuhiro

AU - Inoue, Kaoru

AU - Tanaka, Tsuyoshi

AU - Ueda, Daisuke

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.

AB - We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on sapphire substrate. Owing to the lowest (0.4 Ω ·mm) source resistance of AlGaN/GaN HFETs, the HFETs exhibited excellent DC and RF characteristics, and sufficient ability to operate in the K-band frequency range is obtained. The fabricated MMIC with a CPW-line structure exhibited a smallsignal gain higher than 10 dB with a 3-dB bandwidth of 20-24.5 GHz and that of 13 dB at 21.6GHz when biased at a supply voltage of 7 V The IdB compression point (P1dB) referred to output of 15.4 dBm at 21.6 GHz was obtained. This work is the first report of MMIC amplifier fabricated on sapphire successfully operating in the K band.

KW - AlGaN/GaN heteroj unction FET

KW - Coplanar waveguides

KW - MMIC amplifiers

KW - Sapphire

KW - Source resistance

KW - Superlattices

UR - http://www.scopus.com/inward/record.url?scp=33749257341&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2005.1516585

DO - 10.1109/MWSYM.2005.1516585

M3 - Conference contribution

AN - SCOPUS:33749257341

SN - 0780388461

SN - 9780780388468

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 299

EP - 302

BT - 2005 IEEE MTT-S International Microwave Symposium Digest

Y2 - 12 June 2005 through 17 June 2005

ER -