A highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Application

Jia-Liang Chen, Tang-Jung Chiu, Christina Jou

研究成果: Conference contribution同行評審

摘要

A highly integrated 2.4-GHz Class F power amplifier using TSMC 0.35 mu m 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier.
原文English
主出版物標題2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS
發行者IEEE
頁面277-+
ISBN(列印)1-4244-0179-8
出版狀態Published - 2006
事件International Symposium on VLSI Design, Automation and Test - Hsinchu, Taiwan
持續時間: 26 四月 200628 四月 2006

Conference

ConferenceInternational Symposium on VLSI Design, Automation and Test
國家Taiwan
城市Hsinchu
期間26/04/0628/04/06

指紋 深入研究「A highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Application」主題。共同形成了獨特的指紋。

引用此