A High-Temperature Die-Bonding Structure Fabricated at Low Temperature for Light-Emitting Diodes

Li Chin Cheng, Chih Ming Chen*, Ming Guan Chen, Chi Chang Hu, Hsin Yi Jiang, Ray-Hua Horng, Dong Sing Wuu

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

A trilayer of Sn/Bi/Sn was deposited on a heat sink substrate as the die-bonding material for a light-emitting diode. The eutectic feature of the Sn/Bi system allowed the die-bonding to be carried out at a low temperature using a facile thermocompression process. Two thin Sn layers were sacrificed to form two intermetallic compounds sandwiching the Bi layer, and this high-temperature die-bonding structure showed superior thermal management performance under harsh operation environments (high temperature/current) based on thermal infrared, thermal resistance, and derating analyses.

原文English
文章編號7140751
頁(從 - 到)835-837
頁數3
期刊IEEE Electron Device Letters
36
發行號8
DOIs
出版狀態Published - 1 八月 2015

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