A high-efficiency HBT MMIC power amplifier

R. Ramachandran*, M. Nijjar, A. Podell, E. Stoneham, S. Mitchell, N. L. Wang, W. J. Ho, Mau-Chung Chang, G. J. Sullivan, J. A. Higgins, P. M. Asbeck

*Corresponding author for this work

研究成果: Paper同行評審

13 引文 斯高帕斯(Scopus)

摘要

An AlGaAs/GaAs heterojunction bipolar transistor monolithic microwave IC (HBT MMIC) power amplifier is developed that demonstrates very high power-added efficiency, high gain, and broad bandwidth. It uses a cascode structure with four 200-μm common-emitter HBT cells driving four common-base cells of the same size. This amplifier achieves over 14-dB gain from 6 to 10 GHz, with a peak power-added efficiency (PAE) of 47% at 7.5 GHz at an output power level of 31 dBm. This corresponds to a power density of over 3 W per millimeter of emitter length. Input and output matching networks, as well as biasing networks, are all contained within the chip, which measures 80 × 80 mils (2 × 2 mm).

原文English
頁面357-360
頁數4
出版狀態Published - 1 十月 1990
事件12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC - New Orleans, LA, USA
持續時間: 7 十月 199010 十月 1990

Conference

Conference12th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - GaAs IC
城市New Orleans, LA, USA
期間7/10/9010/10/90

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