A flexible mixed-signal/RF CMOS technology for implantable electronics applications

C. Y. Hsieh, C. S. Chen, W. A. Tsou, Y. T. Yeh, Kuei-Ann Wen, L. S. Fan

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A novel post-CMOS fabrication process has been developed to transform a 0.18 μm 1P6M mixed-signal/RF CMOS (complementary metal oxide semiconductor)-integrated circuit chips fabricated on an 8 inch SOI (silicon-on-insulator) wafer into flexible devices sandwiched between biocompatible material (10 μm parylene-C on both sides in this case) and enables future implementation of implantable and fully integrated electronic devices. The functionality of the flexible integrated circuits is demonstrated by a low phase noise RF CMOS VCO (voltage-controlled oscillator) circuit in a ring oscillator configuration that operates at a few hundred MHz to GHz. We report here the associated post-processing technology to make these flexible IC chips and the characterization of both MOS transistors and the demonstration circuit on the flexible IC chip under bending stresses.

原文English
文章編號045017
期刊Journal of Micromechanics and Microengineering
20
發行號4
DOIs
出版狀態Published - 30 三月 2010

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