A Film-Profile-Engineered 3-D InGaZnO Inverter Technology With Systematically Tunable Threshold Voltage

Rong Jhe Lyu, Horng-Chih Lin, Pei-Wen Li, Tiao Yuan Huang

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

In this paper, a new depletion-load metal oxide-based inverter with 3-D structure is realized with film-profile-engineered InGaZnO (IGZO) thin-film transistors (TFTs). The proposed inverter possesses vertically stacked load and drive TFTs whose threshold voltage can be flexibly adjusted into a wide range of -2.3-1 V through merely adjusting the geometric parameters without the necessity of additional processes or masks. The 3-D IGZO inverters constructed through the proposed technology demonstrate full-swing switching with voltage gains up to 19 V/V under an operation voltage of 9 V. The 3-D inverters can not only reduce the footprint but also promote the resistance toward light-induced instability.

原文English
文章編號7508409
頁(從 - 到)3533-3539
頁數7
期刊IEEE Transactions on Electron Devices
63
發行號9
DOIs
出版狀態Published - 1 九月 2016

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