The operation of a ferroelectric memory cell for nonvolatile random access memory (NVRAM) applications is described. Because ferroelectric polarization reversal only occurs during store/recall but not DRAM read/write, ferroelectric fatigue is not a serious endurance problem. In the worst case, the effective silicon dioxide thickness of the unoptimized film studied here is less than 15 angstrom. The resistivity and endurance properties of the ferroelectric films can be optimized by modifying the composition of the film. This cell can be the basis of a very high density nonvolatile RAM with practically no read/write cycle limit and at least 1010 nonvolatile store/recall cycles.
|頁（從 - 到）||15-16|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 十二月 1990|
|事件||1990 Symposium on VLSI Technology - Honolulu, HI, United States|
持續時間: 4 六月 1990 → 7 六月 1990