A ferroelectric DRAM cell for high density NVRAMs

Reza Moazzami*, Chen-Ming Hu, William H. Shepherd

*Corresponding author for this work

研究成果: Conference article同行評審

11 引文 斯高帕斯(Scopus)

摘要

The operation of a ferroelectric memory cell for nonvolatile random access memory (NVRAM) applications is described. Because ferroelectric polarization reversal only occurs during store/recall but not DRAM read/write, ferroelectric fatigue is not a serious endurance problem. In the worst case, the effective silicon dioxide thickness of the unoptimized film studied here is less than 15 angstrom. The resistivity and endurance properties of the ferroelectric films can be optimized by modifying the composition of the film. This cell can be the basis of a very high density nonvolatile RAM with practically no read/write cycle limit and at least 1010 nonvolatile store/recall cycles.

原文English
頁(從 - 到)15-16
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
出版狀態Published - 1 十二月 1990
事件1990 Symposium on VLSI Technology - Honolulu, HI, United States
持續時間: 4 六月 19907 六月 1990

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