A Cu metalized power InGaP/GaAs heterojuction bipolar transistor with Pd/Ge/Cu alloyed ohmic contact

S. P. Wang, Y. C. Lin, Y. L. Tseng, K. S. Chen, J. C. Huang, Edward Yi Chang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The Cu-metalized InGaP/GaAs HBTs using Pd/Ge/Cu ohmic contact to n-type GaAs, Pt/Ti/Pt ohmic contact to p+-type GaAs, and Ti/Pt/Cu for interconnect metals with Pt as the diffusion barrier has been successfully fabricated for power application. The Pd/Ge/Cu metal structure forms a low contact resistance ohmic contact to n-type GaAs with a low specific contact resistivity of 5.73 × 10-7 Ω-cm2 after annealed at 250 °C for 20 minutes. The 4 × 20μm2 Cu-metalized InGaP/GaAs HBTs demonstrated a power of 10.06dBm with power efficiency of 35.6%.

原文English
主出版物標題2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
出版狀態Published - 1 十二月 2009
事件2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009 - Tampa, FL, United States
持續時間: 18 五月 200921 五月 2009

出版系列

名字2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009

Conference

Conference2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009
國家United States
城市Tampa, FL
期間18/05/0921/05/09

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