A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

Guang Li Luo*, Shih Chiang Huang, Cheng Ting Chung, Dawei Heh, Chao-Hsin Chien, Chao Ching Cheng, Yao Jen Lee, Wen Fa Wu, Chiung Chih Hsu, Mei Ling Kuo, Jay Yi Yao, Mao Nan Chang, Chee Wee Liu, Chen-Ming Hu, Chun Yen Chang, Fu Liang Yang

*Corresponding author for this work

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.

原文English
主出版物標題2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs
出版狀態Published - 1 十二月 2009
事件2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
持續時間: 7 十二月 20099 十二月 2009

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2009 International Electron Devices Meeting, IEDM 2009
國家United States
城市Baltimore, MD
期間7/12/099/12/09

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