A comparison study of high-density MIM capacitors with ALD HfO 2-Al 2O 3 laminated, sandwiched and stacked dielectrics

Shi Jin Ding*, H. Hu, Chunxiang Zhu, S. J. Kim, M. F. Li, B. J. Cho, Albert Chin, D. L. Kwong

*Corresponding author for this work

研究成果: Paper同行評審

2 引文 斯高帕斯(Scopus)

摘要

The HfO 2-Al 2O 3 laminate MIM capacitor exhibits superior performances to the stack and sandwich counterparts, including the smallest linear voltage coefficient of capacitance (β) and leakage current, the highest breakdown voltage, the longest time-to-breakdown as well as the most stable quadratic voltage coefficient of capacitance (a) and capacitance under CVS due to weak electron trapping. The underlying mechanism is likely attributed to the alternate insertions of Al 2O 3 into the bulk HfO 2, thereby preventing crystallization of HfO 2 film.

原文English
頁面403-406
頁數4
出版狀態Published - 1 十二月 2004
事件2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
持續時間: 18 十月 200421 十月 2004

Conference

Conference2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
國家China
城市Beijing
期間18/10/0421/10/04

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