A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides

Z. H. Liu, E. Rosenbaum, P. K. Ko, Chen-Ming Hu, Y. C. Cheng, C. G. Sodini, B. J. Gross, T. P. Ma

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongly dependent on frequency, and lifetime under high frequency stress is longer than that under DC stress. RNO and FOX display interface hardness under high field injection at all frequencies. Interface trap generation is not a strong function of frequency in any of the oxides studied. Examination of charge trapping indicates that frequency-dependent hole trapping is responsible for the frequency dependence of TDDB.

原文English
主出版物標題International Electron Devices Meeting 1991, IEDM 1991
發行者Institute of Electrical and Electronics Engineers Inc.
頁面723-726
頁數4
ISBN(電子)0780302435
DOIs
出版狀態Published - 1 一月 1991
事件International Electron Devices Meeting, IEDM 1991 - Washington, United States
持續時間: 8 十二月 199111 十二月 1991

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
1991-January
ISSN(列印)0163-1918

Conference

ConferenceInternational Electron Devices Meeting, IEDM 1991
國家United States
城市Washington
期間8/12/9111/12/91

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    Liu, Z. H., Rosenbaum, E., Ko, P. K., Hu, C-M., Cheng, Y. C., Sodini, C. G., Gross, B. J., & Ma, T. P. (1991). A comparative study of the effect of dynamic stressing on high-field endurance and stability of reoxidized-nitrided, fluorinated and conventional oxides. 於 International Electron Devices Meeting 1991, IEDM 1991 (頁 723-726). [235321] (Technical Digest - International Electron Devices Meeting, IEDM; 卷 1991-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1991.235321