A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors

Wei Xiang You, Pin Su*

*Corresponding author for this work

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

This brief presents a compact subthreshold model for short-channel monolayer transition metal dichalcogenide (TMD) field-effect transistors. In this model, the impact of fringe fields from the high-K gate dielectric is considered and incorporated into a new characteristic-length expression using a single model parameter. This model has been verified with 2-D numerical simulations for TMD devices with gate length down to 5.9 nm based on ITRS 2028 low-power technology node.

原文English
文章編號7482768
頁(從 - 到)2971-2974
頁數4
期刊IEEE Transactions on Electron Devices
63
發行號7
DOIs
出版狀態Published - 1 七月 2016

指紋 深入研究「A Compact Subthreshold Model for Short-Channel Monolayer Transition Metal Dichalcogenide Field-Effect Transistors」主題。共同形成了獨特的指紋。

引用此