A compact quantum-mechanical model for double-gate MOSFET

Chung Hsun Lin*, Mohan V. Dunga, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

A bias-dependent QM correction for surface potential calculation is derived for DG MOSFETs. The QM-corrected surface potential agrees with the 2-D simulation results well. This indicates that both Vth shift in the subthreshold and strong inversion regions and gate capacitance degradation in the strong inversion region due to QM are predicted simultaneously. The model can predict the complicated QM effect dependence on various device parameters, such as Nbody, Tsi, Tox, etc.

原文English
主出版物標題ICSICT-2006
主出版物子標題2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
發行者IEEE Computer Society
頁面1272-1274
頁數3
ISBN(列印)1424401615, 9781424401611
DOIs
出版狀態Published - 23 十月 2006
事件ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
持續時間: 23 十月 200626 十月 2006

出版系列

名字ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
國家China
城市Shanghai
期間23/10/0626/10/06

指紋 深入研究「A compact quantum-mechanical model for double-gate MOSFET」主題。共同形成了獨特的指紋。

引用此