A CMOS bandgap reference circuit for sub-1-V operation without using extra low-threshold-voltage device

Ming-Dou Ker*, Jung Sheng Chen, Ching Yun Chu

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A new sub-1-V CMOS bandgap voltage reference without using low-threshold-voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25-μm CMOS process, where the occupied silicon area is only 177 μm × 106μm. The experimental results have shown that, with the minimum supply voltage of 0.85 V, the output reference voltage is 238.2mV at room temperature, and the temperature coefficient is 58.1 ppm/°C from-10°C to 120deg;C without laser trimming. Underthe supply voltage of 0.85V, the average power supply rejection ratio (PSRR) is -33.2dB at 10 kHz.

原文English
頁(從 - 到)2150-2154
頁數5
期刊IEICE Transactions on Electronics
E88-C
發行號11
DOIs
出版狀態Published - 1 十一月 2005

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