A capacitorless double-gate DRAM (DG-DRAM) cell is proposed in this study. Its dual gates and thin body reduce off-state leakage and disturb problems. Dopant fluctuations, which can be particularly important in high-density arrays, are avoided by using a thin, lightly doped body. The cell's large body coefficient ((dVT)/(dVBS)) transforms small gains of body potential into increased drain current. MEDICI simulations for 85°C show that a DG-DRAM cell may sustain a measurable change in drain current several hundred milliseconds after programming. These characteristics suggest that a thin body, double-gate cell is an interesting candidate for high density DRAM technologies.