A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects

Jyh-Chyurn Guo*, Teng Yang Tan

*Corresponding author for this work

研究成果: Article

41 引文 斯高帕斯(Scopus)

摘要

A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional π-model. Good match with the measured S-parameters,L(ω), Re(Zin(ω)), and Q(ω) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.

原文English
頁(從 - 到)413-421
頁數9
期刊IEEE Transactions on Electron Devices
53
發行號3
DOIs
出版狀態Published - 1 三月 2006

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