A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS

Chang Tsung Fu*, Stewart S. Taylor, Chien-Nan Kuo

*Corresponding author for this work

研究成果: Conference contribution同行評審

9 引文 斯高帕斯(Scopus)

摘要

A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm2. 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.

原文English
主出版物標題Proceedings of the 2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008
頁面317-320
頁數4
DOIs
出版狀態Published - 22 九月 2008
事件2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008 - Atlanta, GA, United States
持續時間: 15 六月 200817 六月 2008

出版系列

名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN(列印)1529-2517

Conference

Conference2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008
國家United States
城市Atlanta, GA
期間15/06/0817/06/08

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