A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm2. 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.
|主出版物標題||Proceedings of the 2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008|
|出版狀態||Published - 22 九月 2008|
|事件||2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008 - Atlanta, GA, United States|
持續時間: 15 六月 2008 → 17 六月 2008
|名字||Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium|
|Conference||2008 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2008|
|期間||15/06/08 → 17/06/08|