A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs

Szu Ling Liu*, Yu Chien Huang, Ying Jen Chen, Tsu Chang, Albert Chin

*Corresponding author for this work

研究成果: Conference contribution

摘要

In this paper, a two-stage 2.4 GHz power amplifier (PA) using the high-breakdown-voltage asymmetric NMOSFETs was implemented in a 0.18-μm CMOS technology. In this process, the conventional NMOSFETs have a drain-to-source breakdown voltage (BVdss) about 3.5V, therefore restricting the available output power in PA designs. However, by using the special asymmetric NMOSFETs in the proposed PA, the circuit can safely operate at a supply voltage from 1.8 to 2.75V. Under a 2.75V operation, good power performances include a power gain of 20.4 dB, an output 1-dB compression point (Pout, 1dB) of 21.5dBm and a power-added-efficiency (PAE) of 29.6%.

原文English
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面490-492
頁數3
DOIs
出版狀態Published - 1 十二月 2012
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
持續時間: 4 十二月 20127 十二月 2012

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
國家Taiwan
城市Kaohsiung
期間4/12/127/12/12

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  • 引用此

    Liu, S. L., Huang, Y. C., Chen, Y. J., Chang, T., & Chin, A. (2012). A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs. 於 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (頁 490-492). [6421640] (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2012.6421640