A 23.6ppm/°C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from -50°C to 200°C and Supply Voltage Range from 3.9 to 24V

Chenu Hsing Liao, Shang Hsien Yang, Meng Yin Liao, Kai Cheng Chung, Neha Kumari, Ke Horng Chen, Yin Hsi Lin, Shian Ru Lin, Tsung Yen Tsai, Ying Zong Juang

研究成果: Conference contribution同行評審

摘要

The demand for automotive electronics is increasing in autonomous-driving electric vehicles. Automotive electronics use high-power-density DC-DC converters that are required to withstand extreme operating temperatures up to 200°C. As depicted in the top left of Fig. 3.8.1, conventional bandgap and CMOS reference-voltage circuits have a lower operating temperature [1]-[8]. Although power consumption can be effectively reduced from 2.6nW [2] to 192pW [8], the reference-voltage circuits are not suitable for high-power-density applications due to the limited temperature range.

原文English
主出版物標題2020 IEEE International Solid-State Circuits Conference, ISSCC 2020
發行者Institute of Electrical and Electronics Engineers Inc.
頁面72-74
頁數3
ISBN(電子)9781728132044
DOIs
出版狀態Published - 二月 2020
事件2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 - San Francisco, United States
持續時間: 16 二月 202020 二月 2020

出版系列

名字Digest of Technical Papers - IEEE International Solid-State Circuits Conference
2020-February
ISSN(列印)0193-6530

Conference

Conference2020 IEEE International Solid-State Circuits Conference, ISSCC 2020
國家United States
城市San Francisco
期間16/02/2020/02/20

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