A 1V CMOS low-noise amplifier with inductive resonated for 3.1-10.6GHz UWB wireless receiver

Zhe Yang Huang*, Che Cheng Huang, Chun Chieh Chen, Chung-Chih Hung

*Corresponding author for this work

研究成果: Conference contribution

6 引文 斯高帕斯(Scopus)

摘要

In this paper a low power and low-noise amplifier (LNA) is designed for ultra-wideband (UWB) system. The design consists of a wideband input impedance matching network, two stages common-source amplifier with inductive resonated load and an output buffer for measurement purpose; it is fabricated in TSMC 0.18um standard RF CMOS process. The measured UWB LNA gives 12.0dB gain and 8.0GHz 3dB bandwidth (3.0 - 11.0GHz) while consuming only 7.3mW through a 1.0V supply including the buffer. Over the 3.1 - 10.6GHz frequency band, a minimum noise figure of 4.2dB and input return loss lower than -8.7dB have been achieved.

原文English
主出版物標題Proceedings - 20th Anniversary IEEE International SOC Conference
頁面15-18
頁數4
DOIs
出版狀態Published - 1 十二月 2007
事件20th Anniversary IEEE International SOC Conference - Hsinchu, Taiwan
持續時間: 26 九月 200729 九月 2007

出版系列

名字Proceedings - 20th Anniversary IEEE International SOC Conference

Conference

Conference20th Anniversary IEEE International SOC Conference
國家Taiwan
城市Hsinchu
期間26/09/0729/09/07

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