A 1.75GHz inductor-less CMOS low noise amplifier with high-Q active inductor load

Jhy Neng Yang*, Yi Chang Cheng, Terng-Yin Hsu, Terng Ren Hsu, Chen-Yi Lee

*Corresponding author for this work

研究成果: Paper同行評審

5 引文 斯高帕斯(Scopus)

摘要

A 1.75GHz CMOS inductor-less low noise amplifier with high-Q active inductor load using 0.35um standard CMOS digital process is presented. In this low noise amplifier, the compact tunable high-Q active inductor load is connected to the common-gate configuration to improve the performance of the high power gain, low power consumption and simple matching characteristics. Not using any passive components is to reduce the area of chip and the complexity. HSPICE simulation has been performed to verify the performance of the designed low noise amplifier. It has been shown that the amplifier has a power gain of 24dB(S21), S11 of -31dB, S12 of -38.5dB and S22 of -21.4dB under 3.3V power supply with 9.3mW power consumption around at 1.75GHz center frequency. The experimental chip fabricated occupies 0.057×0.056 mm2 chip area.

原文English
頁面816-819
頁數4
出版狀態Published - 1 十二月 2001
事件2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001) - Dayton, OH, United States
持續時間: 14 八月 200117 八月 2001

Conference

Conference2001 Midwest Symposium on Circuits and Systems (MWSCAS 2001)
國家United States
城市Dayton, OH
期間14/08/0117/08/01

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