A 17-35 GHz broadband, high efficiency PHEMT power amplifier using synthesized transformer matching technique

Pin Cheng Huang*, Zuo-Min Tsai , Kun You Lin, Huei Wang

*Corresponding author for this work

研究成果: Article

25 引文 斯高帕斯(Scopus)

摘要

This paper presents a 17 GHz to 35 GHz broadband power amplifier (PA) using 0.15-μm GaAs pHEMT technology. The synthesized transformer using microstrip line matching technique is proposed in this PA design to enhance the broadband frequency response and minimize the chip size. The design procedures are also presented. A high efficiency broadband PA in commercial 0.15 μm GaAs pHEMT process with the best P 1 dBof 22 dBm, P sat of 23.5 dBm, and PAE of 40% are demonstrated to verify the design concepts. This PA has the highest PAE, smallest chip size, and wide fractional bandwidth among the broadband GaAs HEMT PAs from K to Ka band.

原文English
文章編號6070995
頁(從 - 到)112-119
頁數8
期刊IEEE Transactions on Microwave Theory and Techniques
60
發行號1
DOIs
出版狀態Published - 1 一月 2012

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