A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.
|頁（從 - 到）||382-388|
|期刊||IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences|
|出版狀態||Published - 1998|