A 1.5 GHz CMOS low noise amplifier

Ryuichi Fujimoto*, Shoji Otaka, Hiroshi Iwai, Hiroshi Tanimoto

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A 1.5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13.8 dB, the minimum noise figure (NFmin) is 2.9dB and the input-referred third-order intercept point (IIP3) is -2 .5 dBm at 1.5 GHz. The LNA consumes 8.6mA from a 3.0V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.

原文English
頁(從 - 到)382-388
頁數7
期刊IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
E81-A
發行號3
出版狀態Published - 1998

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