@inproceedings{1b697aa2898b499c85ddee8e79e7cc67,
title = "9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film",
abstract = "Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMOR-RAM) cell and the lowest reported 1μA programming current (Iprog, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WOx and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.",
author = "Ho, {Chia Hua} and Hsu, {Cho Lun} and Chen, {Chun Chi} and Liu, {Jan Tsai} and Wu, {Cheng San} and Huang, {Chien Chao} and Chen-Ming Hu and Yang, {Fu Liang}",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/IEDM.2010.5703389",
language = "English",
isbn = "9781424474196",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",
note = "null ; Conference date: 06-12-2010 Through 08-12-2010",
}