9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film

Chia Hua Ho*, Cho Lun Hsu, Chun Chi Chen, Jan Tsai Liu, Cheng San Wu, Chien Chao Huang, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

研究成果: Conference contribution

34 引文 斯高帕斯(Scopus)

摘要

Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMOR-RAM) cell and the lowest reported 1μA programming current (Iprog, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WOx and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.

原文English
主出版物標題2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
出版狀態Published - 1 十二月 2010
事件2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
持續時間: 6 十二月 20108 十二月 2010

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference2010 IEEE International Electron Devices Meeting, IEDM 2010
國家United States
城市San Francisco, CA
期間6/12/108/12/10

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    Ho, C. H., Hsu, C. L., Chen, C. C., Liu, J. T., Wu, C. S., Huang, C. C., Hu, C-M., & Yang, F. L. (2010). 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703389] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703389