9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film

Chia Hua Ho; Cho Lun Hsu; Chun Chi Chen; Jan Tsai Liu; Cheng San Wu; Chien Chao Huang; Chen-Ming Hu; Fu Liang Yang

doi:10.1109/IEDM.2010.5703389

9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO_x film

Chia Hua Ho^*, Cho Lun Hsu, Chun Chi Chen, Jan Tsai Liu, Cheng San Wu, Chien Chao Huang, Chen-Ming Hu, Fu Liang Yang

^*Corresponding author for this work

國際半導體產業學院

研究成果: Conference contribution › 同行評審

35 引文斯高帕斯（Scopus）

摘要

Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMOR-RAM) cell and the lowest reported 1μA programming current (I_prog, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WO_x and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.

原文	English
主出版物標題	2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs	https://doi.org/10.1109/IEDM.2010.5703389
出版狀態	Published - 1 十二月 2010
事件	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States 持續時間: 6 十二月 2010 → 8 十二月 2010

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
國家	United States
城市	San Francisco, CA
期間	6/12/10 → 8/12/10

存取文件

10.1109/IEDM.2010.5703389

Link to publication in Scopus

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引用此

Ho, C. H., Hsu, C. L., Chen, C. C., Liu, J. T., Wu, C. S., Huang, C. C., Hu, C-M., & Yang, F. L. (2010). 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO_x film. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703389] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703389

Ho, Chia Hua ; Hsu, Cho Lun ; Chen, Chun Chi ; Liu, Jan Tsai ; Wu, Cheng San ; Huang, Chien Chao ; Hu, Chen-Ming ; Yang, Fu Liang. / 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO_x film. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WOx film",

abstract = "Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMOR-RAM) cell and the lowest reported 1μA programming current (Iprog, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WOx and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.",

author = "Ho, {Chia Hua} and Hsu, {Cho Lun} and Chen, {Chun Chi} and Liu, {Jan Tsai} and Wu, {Cheng San} and Huang, {Chien Chao} and Chen-Ming Hu and Yang, {Fu Liang}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/IEDM.2010.5703389",

language = "English",

isbn = "9781424474196",

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note = "null ; Conference date: 06-12-2010 Through 08-12-2010",

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Ho, CH, Hsu, CL, Chen, CC, Liu, JT, Wu, CS, Huang, CC, Hu, C-M & Yang, FL 2010, 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO_x film. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703389, Technical Digest - International Electron Devices Meeting, IEDM, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703389

9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO_x film. / Ho, Chia Hua; Hsu, Cho Lun; Chen, Chun Chi; Liu, Jan Tsai; Wu, Cheng San; Huang, Chien Chao; Hu, Chen-Ming; Yang, Fu Liang.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703389 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Conference contribution › 同行評審

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AU - Ho, Chia Hua

AU - Hsu, Cho Lun

AU - Chen, Chun Chi

AU - Liu, Jan Tsai

AU - Wu, Cheng San

AU - Huang, Chien Chao

AU - Hu, Chen-Ming

AU - Yang, Fu Liang

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AB - Record 9nm half-pitch functional Transition-Metal-Oxide based Resistive Random Access Memory (TMOR-RAM) cell and the lowest reported 1μA programming current (Iprog, both Set and Reset) have been achieved with thermally oxidized sub-stoichiometric WOx and Nano Injection Lithography (NIL) technique [1]. The unexpectedly low programming current at 9nm diameter has been examined in-depth, it offers potential for scaling low power non-volatile memory. This small device shows Reset/Set resistance ratio around 10, stability during read operation, and good data-retention. A switching mechanism based on oxygen-ion dynamics can account for the observed device characteristics as discussed in this work.

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Ho CH, Hsu CL, Chen CC, Liu JT, Wu CS, Huang CC 等. 9nm half-pitch functional resistive memory cell with <1μA programming current using thermally oxidized sub-stoichiometric WO_x film. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703389. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703389