99.3% Efficiency of three-phase inverter for motor drive using GaN-based gate injection transistors

Tatsuo Morita*, Satoshi Tamura, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda

*Corresponding author for this work

研究成果: Conference contribution同行評審

135 引文 斯高帕斯(Scopus)

摘要

In this paper, we present a successful operation of Gallium Nitride(GaN)-based three-phase inverter with high efficiency of 99.3% for driving motor at 900W under the carrier frequency of 6kHz. This efficiency well exceeds the value by IGBT (Insulated Gate Bipolar Transistor). This demonstrates that GaN has a great potential for power switching application competing with SiC. Fully reduced on-state resistance in a new normally-off GaN transistor called Gate Injection Transistor (GIT) greatly helps to increase the efficiency. In addition, use of the bidirectional operation of the lateral and compact GITs with synchronous gate driving, the inverter is operated free from fly-wheel diodes which have been connected in parallel with IGBTs in a conventional inverter system.

原文English
主出版物標題2011 26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
頁面481-484
頁數4
DOIs
出版狀態Published - 13 五月 2011
事件26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011 - Fort Worth, TX, United States
持續時間: 6 三月 201110 三月 2011

出版系列

名字Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Conference

Conference26th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2011
國家United States
城市Fort Worth, TX
期間6/03/1110/03/11

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