980 nm InGaAs/AlGaAs quantum well lasers with extremely low beam divergence

Shun-Tung Yen*, Kuo-Jui Lin, Der Cherng Liu, Chia-Ming Tsai, Chien Ping Lee

*Corresponding author for this work

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)

摘要

980 NM InGaAs/AlGaAs lasers have been developed with a specially designed cladding structure. For a 2.5 μm wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13° and a lateral divergence of 8°. The threshold current can remain acceptably low. Additionally, with another design, a record small vertical far field angle of 11° has been obtained.

原文English
頁(從 - 到)13-14
頁數2
期刊Conference Digest - IEEE International Semiconductor Laser Conference
DOIs
出版狀態Published - 1 十二月 1996
事件Proceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr
持續時間: 13 十月 199618 十月 1996

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