980 NM InGaAs/AlGaAs lasers have been developed with a specially designed cladding structure. For a 2.5 μm wide ridge waveguide structure, the far field pattern has a vertical divergence of only 13° and a lateral divergence of 8°. The threshold current can remain acceptably low. Additionally, with another design, a record small vertical far field angle of 11° has been obtained.
|頁（從 - 到）||13-14|
|期刊||Conference Digest - IEEE International Semiconductor Laser Conference|
|出版狀態||Published - 1 十二月 1996|
|事件||Proceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr|
持續時間: 13 十月 1996 → 18 十月 1996